IGN1214M250是适合L波段雷达应用的高功率GaN晶体管。 该晶体管被指定用于AB类工作，提供1.2-1.4 GHz的工作频率，小250W的峰值脉冲功率，50V和10％的占空比。 该单元采用金线技术通过芯片和线材技术组装，装在基于金属的封装中，并用陶瓷环氧树脂盖密封。
特征
GaN on SiC HEMT技术
250W输出功率
AB类操作
预先匹配的内部阻抗
经过100％大功率射频测试
负栅极电压/偏置排序
产品应用
通信
相关型号
IGN0110UM100 IGN1012S40 IGN1214L30 IGN2729M500
IGN0160UM12 IGN1011L1000R2 IGN1214L500B IGN2730M65
IGN0450M850 IGN1011L120 IGN1214M120 IGN2731L10
IGN0450M250 IGN1011L1200 IGN1214M250 IGN2731M120
IGN450M160 IGN1011L20-PB *IGN1214M300 IGN2731M130
IGN0450L1250 IGN1011L20-SP IGN1214M380C IGN2731M180
IGN0450M1500 IGN1011L60 IGN1214M500 IGN2731M200
IGN0912CW10 IGN1011L70 IGN1214M500R2 IGN2731M250
IGN0912CW150 IGN1011M15 IGN1214M60 IGN2731M5
IGN0912CW300 IGN1011M400 IGN1214M600 IGN2731M80
IGN0912L125A IGN1011M600 IGN1214M650A IGN2732M10
IGN0912L250A IGN1011M800 IGN1214S1000B IGN2856S40
IGN0912L250M IGN1030L1000 IGN1315M650 IGN2856S500
IGN0912L45 IGN1030L800 IGN2429M400 IGN2932M75
IGN0912L500 IGN1030M40 IGN2729M200 IGN2998S500
IGN0912LM500 IGN1030M800 IGN2729M250C IGN3135L115
IGN1012L40 IGN1090M800 IGN2729M400 IGN3135L12
IGN1012S1000 IGN1214L125 IGN2729M400R2 IGN3135M135
IGN1012S30 IGN1214L15 IGN2729M400R3 IGN3135M250
IGN5259M80R2 IGN3842M130
